continental device india limited data sheet page 1 of 3 BUX84, 84a npn plastic power transistors high voltage, high speed power switching applications absolute maximum ratings 84 84a collector-emitter voltage (v be = 0) v ces max. 800 800 v collector-emitter voltage (open base) v ceo max. 400 400 v collector current i c max. 2.0 a total power dissipation up to t c = 25c p tot max. 40 w junction temperature t j max. 150 c collector-emitter saturation voltage i c = 0.3a; i b = 30 ma v cesat max. 1.5 0.8 v d.c. current gain i c = 0.1 a; v ce = 5 v h fe min. 30 ratings (at t a =25c unless otherwise specified) limiting values 84 84a collector-emitter voltage (v be = 0) v ces max. 800 800 v collector-emitter voltage (open base) v ceo max. 400 400 v emitter-base voltage (open collector) v ebo max. 5.0 v BUX84, BUX84a pin configuration 1. base 2. collector 3. emitter 4. collector b 1 23 j m g d h a o o k n l f e c dim min. max. all diminsions in mm. a 14.42 16.51 b 9.63 10.67 c 3.56 4.83 d0.90 e 1.15 1.40 f 3.75 3.88 g 2.29 2.79 h 2.54 3.43 j0.56 k 12.70 14.73 l 2.80 4.07 m 2.03 2.92 n 31.24 odeg 7 1 2 3 4 to-220 plastic package continental device india limited an iso/ts 16949, iso 9001 and iso 14001 certified company
continental device india limited data sheet page 2 of 3 collector current i c max. 2.0 a collector current (peak value) i cm max. 3.0 a base current i b max. 0.75 a total power dissipation up to t c = 25c p tot max. 40 w junction temperature t j max. 150 oc storage temperature t stg ?65 to +150 oc thermal resistance from junction to case r th j?c = 3.125 c/w characteristics t amb = 25c unless otherwise specified 84 84a collector cutoff current v be = 0; v ce = rated v ces i ces max. 0.2 ma v be = 0; v ce = rated v ces ; t c = 125c i ces max. 1.5 ma emitter cut-off current i c = 0; v eb = 5v i ebo max. 1.0 ma breakdown voltages i c = 100 ma; i b = 0 v ceo(sus) * min. 400 v i c = 1 ma; v be = 0 v ces min. 800 v i e = 1 ma; i c = 0 v ebo min. 5.0 v saturation voltages i c = 0.3 a; i b = 30 ma v cesat * max. 1.5 0.8 v i c = 1 a; i b = 0.2 a v cesat * max. 3.0 1.0 v v besat * max. 1.1 v d.c. current gain i c = 0.1 a; v ce = 5 v h fe * min. 30 transition frequency f = 1 mhz i c = 0.2 a; v ce = 10 v f t typ. 20 mhz switching time i c = 1a; v cc = 250v i b = 0.2a; ?i b = 0.4a turn on time t on max 0.5 s storage time t s max. 3.5 s fall time t f max. 1.4 s * pulsed: pulse duration = 300 s; duty cycle
continental device india limited data sheet page 3 of 3 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-579 6150 fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com
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